MSCSM120AM042CT6AG parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Microchip

Model:

MSCSM120AM042CT6AG

Description:

PM-MOSFET-SIC-SBD~-SP6C

Stock:

17971

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$164.01

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Parameters

Current at 25 ° C - continuous drain (Id)

495A(Tc)

Drain source voltage (Vdss)

1200V(1.2kV)

FET Type

2 N Channel(phase angle)

FET function

SiC

Gate charge (Qg) at different Vgs (maximum)

1392nC @ 20V

Input capacitance at different Vds (Ciss) (maximum)

18.1pF @ 1000V

On resistance (maximum) for different Ids and Vgs

5.2 mΩ @ 240A,20V

Power - maximum

2.031kW(Tc)

Vgs (th) (maximum) for different Ids

2.8V @ 6mA

packing

pipe

series

working temperature

-40°C ~ 175°C(TJ)

Encapsulation/Housing

module

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Base installation

Part status

On sale

DataSheet

MSCSM120AM042CT6AG（FET, MOSFET）ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory17971,Price reference "real-time change" China/Hongkong。 MSCSM120AM042CT6AG package/specs, Download MSCSM120AM042CT6AG、Datasheet。